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rev. 1.1, jul. 21, 2009 1 p/n: pm1476 2m-bit [x 1] cmos serial flash features general ? serial peripheral interface compatible -- mode 0 and mode 3 ? 2,097,152 x 1 bit structure ? 64 equal sectors with 4k byte each - any sector can be erased individually ? 4 equal blocks with 64k byte each - any block can be erased individually ? single power supply operation - 2.7 to 3.6 volt for read, erase, and program operations ? latch-up protected to 100ma from -1v to vcc +1v performance ? high performance - fast access time: 85mhz serial clock and 66mhz serial clock - fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - fast erase time: 60ms(typ.)/sector (4k-byte per sector) ; 1s(typ.) and 2s(max.)/block (64k-byte per block) ? low power consumption - low active read current: 12ma(max.) at 85mhz, 8ma(max.) at 66mhz and 4ma(max.) at 33mhz - low active programming current: 15ma (max.) - low active erase current: 15ma (max.) - low standby current: 10ua (max.) - deep power-down mode 1ua (typical) ? minimum 100,000 erase/program cycles software features ? input data format - 1-byte command code ? block lock protection - the bp0~bp4 status bits defne the size of the area to be software protected against program and erase instructions ? auto erase and auto program algorithm - automatically erases and verifes data at selected sector - automatically programs and verifes data at selected page by an internal algorithm that automatically times the program pulse widths (any page to be programed should have page in the erased state frst) ? status register feature ? electronic identifcation - jedec 2-byte device id - res command, 1-byte device id hardware features ? sclk input - serial clock input ? si input - serial data input ? so output - serial data output ? wp# pin - hardware write protection ? hold# pin - pause the chip without diselecting the chip ? package - 8-pin sop (150mil) - all pb-free devices are rohs compliant MX25L2026C
2 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C pin configurations pin description general description the MX25L2026C is a cmos 2,097,152 bit serial flash memory, which is confgured as 262,144 x 8 internally. the MX25L2026C feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. the three bus signals are a clock input (sclk), a serial data input (si), and a serial data output (so). serial access to the device is enabled by cs# input. the MX25L2026C provide sequential read operation on whole chip. after program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the speci - fed page or sector/block locations will be executed. program command is executed on page (256 bytes) basis, and erase command is executes on chip or sector(4k-bytes) or block(64k-bytes). to provide user with ease of interface, a status register is included to indicate the status of the chip. the status read command can be issued to detect completion status of a program or erase operation via wip bit. when the device is not in operation and cs# is high, it is put in standby mode and draws less than 10ua dc cur - rent. the MX25L2026C utilize macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. 8-pin sop (150mil) symbol description cs# chip select si serial data input so serial data output sclk clock input hold# hold, to pause the device without deselecting the device vcc + 3.3v power supply gnd ground wp# write protection 1 2 3 4 cs# so wp# gnd vcc hold# sclk si 8 7 6 5
3 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C block diagram address gener ator memor y arr a y p age buff er y -decoder x-decoder data register sram buff er si sclk cloc k gener ator state machine mode logic sense amplifier hv gener ator output buff er so cs# wp#
4 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C data protection the MX25L2026C is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. during power up the device automatically resets the state machine in the standby mode. in addition, with its control register architecture, alteration of the memory con - tents only occurs after successful completion of specifc command sequences. the device also incorporates sev - eral features to prevent inadvertent write cycles resulting from vcc power-up and power-down transition or system noise. ? valid command length checking: the command length will be checked whether it is at byte base and completed on byte boundary. ? write enable (wren) command: wren command is required to set the write enable latch bit (wel) before other command to change data. the wel bit will return to reset stage under following situation: - power-up - write disable (wrdi) command completion - write status register (wrsr) command completion - page program (pp) command completion - sector erase (se) command completion - block erase (be) command completion - chip erase (ce) command completion ? software protection mode (spm): by using bp0-bp4 bits to set the part of flash protected from data change. ? hardware protection mode (hpm): by using wp# going low to protect the bp0-bp4 bits and srwd bit from data change. ? deep power down mode: by entering deep power down mode, the fash device also is under protected from writing all commands except release from deep power down mode command (rdp) and read electronic sig - nature command (res).
5 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C protected & unprotected all of MX25L2026C protection bits, bp0~bp4, default is set to "1" (protected) after power-on and erase/program process completion. MX25L2026C provides 2 kinds of unprotected methods, general unprotection & special unprotection. table 1. note: bp0~bp4 default set to "1", protected. name status register address range size method bp0 bit 2 03f000h 03ffffh 4kb general unprotection bp1 bit 3 03e000h 03efffh 4kb bp2 bit 4 03c000h 03dfffh 8kb bp3 bit 5 03a000h 03bfffh 8kb bp4 bit 6 000000h 039fffh 232kb special unprotection general unprotection general unprotection is required on the range from address 03a000h to address 03ffffh area unprotection, bp0~bp3. firstly, srwd status bit needs to individual set to 0. then, set the protected bit to 0, bp0 or bp1 or bp2 or bp3, which range needs to be programmed/erased. finally, do the program/erase process. please refer to flowchart 1. special unprotection special unprotection is required on the range from address 000000h to address 039fffh area unprotection, bp4. firstly, srwd status bit needs to individual set to 0. then, it needs to write 4-command key to uplock bp4, command c3/a5/c3/a5 sequence. this key command cannot insert any other command in this 4-command key period. after key command pressed, set the protected bit bp4=0. finally, do the program/erase command. please refer to flowchart 2.
6 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C hold feature hold# pin signal goes low to hold any serial communications with the device. the hold feature will not stop the operation of write status register, programming, or erasing in progress. the operation of hold requires chip select(cs#) keeping low and starts on falling edge of hold# pin signal while serial clock (sclk) signal is being low (if serial clock signal is not being low, hold operation will not start until serial clock signal being low). the hold condition ends on the rising edge of hold# pin signal while se - rial clock(sclk) signal is being low( if serial clock signal is not being low, hold operation will not end until serial clock being low), see figure 1. figure 1. hold condition operation the serial data output (so) is high impedance, both serial data input (si) and serial clock (sclk) are don't care during the hold operation. if chip select (cs#) drives high during hold operation, it will reset the internal logic of the device. to re-start communication with chip, the hold# must be at high and cs# must be at low. hold# cs# sclk hold condition (standard) hold condition (non-standard)
7 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C table 2. command definition (1) add=00h will output the manufacturer's id frst and add=01h will output device id frst. (2) it is not recommended to adopt any other code which is not in the above command defnition table. command (byte) wren (write enable) wrdi (write disable) rdid (read ident- ifcation) rdsr(read status register) wrsr (write status register) read (read data) fast read (fast read data) 1st 06 hex 04 hex 9f hex 05 hex 01 hex 03 hex 0b hex 2nd ad1 ad1 3rd ad2 ad2 4th ad3 ad3 5th x action sets the (wel) write enable latch bit reset the (wel) write enable latch bit output the manufacturer id and 2-byte device id to read out the status register to write new values to the status register n bytes read out until cs# goes high command (byte) se (sector erase) be (block erase) ce (chip erase) pp (page program) dp(deep power down) rdp (release from deep power- down) res (read electronic id) 1st 20 hex 52 or d8 hex 60 or c7 hex 02 hex b9 hex ab hex ab hex 2nd ad1 ad1 ad1 x 3rd ad2 ad2 ad2 x 4th ad3 ad3 ad3 x 5th action command (byte) rems (read electronic manufacturer & device id) key1 key2 1st 90 hex c3 hex a5 hex 2nd x 3rd x 4th add(1) 5th action output the manufacturer id and device id one of key command to set bp4 one of key command to set bp4
8 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C table 3. memory organization "block (64kb)" "total sector" "sector (4kb)" address range protect status bit start end 3 1 63 03f000h 03ffffh bp0 1 62 03e000h 03efffh bp1 2 61 03d000h 03dfffh bp2 60 03c000h 03cfffh 2 59 03b000h 03bfffh bp3 58 03a000h 03afffh 10 48~57 030000h 039fffh bp4 2 16 32~47 020000h 02ffffh 1 16 16~31 010000h 01ffffh 0 16 0~15 000000h 00ffffh
9 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C flowchart 1-- general unprotection wren com mand 06h wrsr comm and 01h + data 01h + data wren com mand 06h comm and c omplet ed program/erase comm and s e t s r wd = 0 wri t e register enable wrsr comm and next write comm and y e s e n d set bp 0 or bp1 o r bp2 or bp3 = 0 area unprotec ted s t a r t after prog r a m / e rase process comple ted, a ll of protectio n b i t s ( b p0~ bp 4 ) t o b e set t o 1 . (pro tected ) wren comm and 06h n o
10 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C flowchart 2-- special unprotection wre n comm and 06h wrsr com mand 01h + data 01h + data wre n comm and 06h com ma n d comple te d wren command 06h set s r w d = 0 write status register e n a b le wrsr com mand n e xt wr i t e co m ma n d y e s n o e n d s et b i t 6 ( b p 4 ) = 0 for a rea unprotected o r s et b i t[2 : 6 ] ( bp0~b p 4) = 0 for unprotected full c h ip s tart key 1 com mand c 3h key 2 com mand a 5h key 1 com mand c 3h key 2 com mand a 5h program /erase co m ma n d this s e quen t i a l comma n d ( 4 com m a n d s ) cannot i n s ert a n y o t h er process or c o mmand. a f ter prog ram / e ra se pro c e ss c o mpleted , al l of prote cti o n bit s (bp 0 ~bp4) to b e s et t o 1 . (pro tected )
11 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C device operation 1. before a command is issued, status register should be checked to ensure device is ready for the intended op - eration. 2. when incorrect command is inputted to this lsi, this lsi becomes standby mode and keeps the standby mode until next cs# falling edge. in standby mode, so pin of this lsi should be high-z. 3. when correct command is inputted to this lsi, this lsi becomes active mode and keeps the active mode until next cs# rising edge. 4. input data is latched on the rising edge of serial clock(sclk) and data shifts out on the falling edge of sclk. the difference of serial mode 0 and mode 3 is shown as figure 2. figure 2. serial modes supported 5. for the following instructions: rdid, rdsr, read, fast_read, res and rems the shifted-in instruction se - quence is followed by a data-out sequence. after any bit of data being shifted out, the cs# can be high. for the following instructions: wren, wrdi, wrsr, se, be, ce, pp, rdp and dp the cs# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6. during the progress of write status register, program, erase operation, to access the memory array is neglect - ed and not affect the current operation of write status register, program, erase. note: cpol indicates clock polarity of serial master, cpol=1 for sclk high while idle, cpol=0 for sclk low while not transmitting. cpha indicates clock phase. the combination of cpol bit and cpha bit decides which serial mode is supported. sclk msb cpha shift in shift out si 0 1 cpol 0 (serial mode 0) (serial mode 3) 1 so sclk msb
12 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C command description (1) write enable (wren) the write enable (wren) instruction is for setting write enable latch (wel) bit. for those instructions like pp, se, be, ce, and wrsr, which are intended to change the device content, should be set every time after the wren in - struction setting the wel bit. the sequence of issuing wren instruction is: cs# goes low-> sending wren instruction code-> cs# goes high. (see figure 11) (2) write disable (wrdi) the write disable (wrdi) instruction is for resetting write enable latch (wel) bit. the sequence of issuing wrdi instruction is: cs# goes low-> sending wrdi instruction code-> cs# goes high. (see figure 12) the wel bit is reset by following situations: - power-up - write disable (wrdi) instruction completion - write status register (wrsr) instruction completion - page program (pp) instruction completion - sector erase (se) instruction completion - block erase (be) instruction completion - chip erase (ce) instruction completion (3) read identifcation (rdid) the rdid instruction is for reading the manufacturer id of 1-byte and followed by device id of 2-byte. the mxic manufacturer id is c2(hex), the memory type id is 20(hex) as the frst-byte device id, and the individual device id of second-byte id is as followings: 12(hex) for MX25L2026C. the sequence of issuing rdid instruction is: cs# goes low-> sending rdid instruction code -> 24-bits id data out on so -> to end rdid operation can use cs# to high at any time during data out. (see figure. 13) while program/erase operation is in progress, it will not decode the rdid instruction, so there's no effect on the cy - cle of program/erase operation which is currently in progress. when cs# goes high, the device is at standby stage.
13 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C (4) read status register (rdsr) the rdsr instruction is for reading status register bits. the read status register can be read at any time (even in program/erase/write status register condition) and continuously. it is recommended to check the write in progress (wip) bit before sending a new instruction when a program, erase, or write status register operation is in progress. the sequence of issuing rdsr instruction is: cs# goes low-> sending rdsr instruction code-> status register data out on so (see figure. 14) the defnition of the status register bits is as below: wip bit. the write in progress (wip) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. when wip bit sets to 1, which means the device is busy in program/erase/write status register progress. when wip bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. wel bit. the write enable latch (wel) bit, a volatile bit, indicates whether the device is set to internal write enable latch. when wel bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. when wel bit sets to 0, which means no internal write enable latch; the de - vice will not accept program/erase/write status register instruction. bp0~bp4 bits. the block protect (bp0~bp4) bits, volatile bits, indicate the protected area(as defned in table 1) of the device to against the program/erase instruction without hardware protection mode being set. to write the block protect (bp0~bp4) bits requires the write status register (wrsr) instruction to be executed. those bits defne the protected area of the memory to against page program (pp), sector erase (se), block erase (be) and chip erase(ce) instructions (only if all block protect bits set to 0, the ce instruction can be executed) srwd bit. the status register write disable (srwd) bit, volatile bit, is operated together with write protection (wp#) pin for providing hardware protection mode. the hardware protection mode requires srwd sets to 1 and wp# pin signal is low stage. in the hardware protection mode, the write status register (wrsr) instruction is no longer ac - cepted for execution and the srwd bit and block protect bits (bp0~bp4) are read only. note: 1. see the table "protected area sizes". the (bp0~bp4) default values are "1" (protected). 2. the srwd default value is "1". bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 srwd status register write protect bp4 protected area bp3 bp2 bp1 bp0 wel (write enable latch) wip (write in progress bit) 1= status register write disable (note 2) (note 1) (note 1) (note 1) (note 1) (note 1) 1=write enable 0=not write enable 1=write operation 0=not in write operation
14 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C (5) write status register (wrsr) the wrsr instruction is for changing the values of status register bits. before sending wrsr instruction, the write enable (wren) instruction must be decoded and executed to set the write enable latch (wel) bit in ad - vance. the wrsr instruction can change the value of block protect (bp0~bp4) bits to defne the protected area of memory (as shown in table 1). the wrsr also can set or reset the status register write disable (srwd) bit in accordance with write protection (wp#) pin signal. the wrsr instruction cannot be executed once the hardware protected mode (hpm) is entered. the sequence of issuing wrsr instruction is: cs# goes low-> sending wrsr instruction code-> status register data on si-> cs# goes high. (see figure 15) the wrsr instruction has no effect on b1, b0 of the status register. the cs# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. the self-timed write status register cycle time (tw) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the write status register cycle is in progress. the wip sets 1 during the tw timing, and sets 0 when write status register cycle is completed, and the write enable latch (wel) bit is reset. table 4. protection modes note: 1. it is defned by the values in the protect status bits (bp0~bp4) of the status register, as shown in table 1. as the table above, the summary of the software protected mode (spm) and hardware protected mode (hpm): software protected mode (spm) (when wp# = high): - when srwd bit=0, and wp# is high, the wren instruction may set the wel bit and can change the values of srwd or bp0~bp4=0. the protected area, which is defned by bp0~bp4, is at software protected mode (spm). - when srwd bit=1 and wp# is high, the wren instruction may set the wel bit, which can change the values of srwd. after setting srwd bit=0, bp0~bp4 can be changed to 0. - please refer to flowchart 1 and 2 for the process fow of changing bp0~bp4 as 0. - key is a 4 command fow. in this fow period, any other process can not be accessed, otherwise key will not be set to 1. key is a special protection for bp4 area. hardware protected mode (hpm) (when wp# = low): - hpm protect the status register from being changed. if wp# = low, the status register can't be changed. - exit the hpm just by changing wp# to high. wp# signal srwd bit key mode write protection of status register memory content protected area unprotected area 1 0 0 software protect status register are writable (except bp4) protect against page program, chip erase and sector/erase block ready to accept page program, chip erase and sector/erase block 1 0 1 software protect all status register are writable 1 1 x software protect only status register srwd is writable other register cant protect against page program, chip erase and sector/erase block na 0 0 x hardware protect status register are not writable protect against page program, chip erase and sector/erase block na 0 1 x
15 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C (6) read data bytes (read) the read instruction is for reading data out. the address is latched on rising edge of sclk, and data shifts out on the falling edge of sclk at a maximum frequency fr. the frst address byte can be at any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single read instruction. the address counter rolls over to 0 when the highest address has been reached. the sequence of issuing read instruction is: cs# goes low-> sending read instruction code-> 3-byte address on si-> data out on so-> to end read operation can use cs# to high at any time during data out. (see figure. 16) (7) read data bytes at higher speed (fast_read) the fast_read instruction is for quickly reading data out. the address is latched on rising edge of sclk, and data of each bit shifts out on the falling edge of sclk at a maximum frequency fc. the frst address byte can be at any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single fast_read instruction. the address counter rolls over to 0 when the highest address has been reached. the sequence of issuing fast_read instruction is: cs# goes low-> sending fast_read instruction code-> 3-byte address on si-> 1-dummy byte address on si->data out on so-> to end fast_read operation can use cs# to high at any time during data out. (see figure. 17) while program/erase/write status register cycle is in progress, fast_read instruction is rejected without any impact on the program/erase/write status register current cycle. (8) sector erase (se) the sector erase (se) instruction is for erasing the data of the chosen sector to be "1". a write enable (wren) in - struction must execute to set the write enable latch (wel) bit before sending the sector erase (se). any address of the sector (see table 3) is a valid address for sector erase (se) instruction. the cs# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. address bits [am-a12] (am is the most signifcant address) select the sector address. the sequence of issuing se instruction is: cs# goes low -> sending se instruction code-> 3-byte address on si -> cs# goes high. (see figure 19) the self-timed sector erase cycle time (tse) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the sector erase cycle is in progress. the wip sets 1 during the tse timing, and sets 0 when sector erase cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp0~bp4 bits, the sector erase (se) instruction will not be executed on the page. if the proccess range covers or crosses address 000000h to address 039fffh area, please use special unprotec - tion method to unprotect the protected bits bp0~bp4. see the flowchart 2.
16 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C (9) block erase (be) the block erase (be) instruction is for erasing the data of the chosen block to be "1". a write enable (wren) in - struction must execute to set the write enable latch (wel) bit before sending the block erase (be). any address of the block (see table 3) is a valid address for block erase (be) instruction. the cs# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. the sequence of issuing be instruction is: cs# goes low -> sending be instruction code-> 3-byte address on si -> cs# goes high. (see figure 20) the self-timed block erase cycle time (tbe) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the sector erase cycle is in progress. the wip sets 1 during the tbe timing, and sets 0 when sector erase cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp0~bp4 bits, the block erase (be) instruction will not be executed on the page. if the proccess range covers or crosses address 000000h to address 039fffh area, please use special unprotec - tion method to unprotect the protected bits bp0~bp4. see the flowchart 2. (10) chip erase (ce) the chip erase (ce) instruction is for erasing the data of the whole chip to be "1". a write enable (wren) instruc - tion must execute to set the write enable latch (wel) bit before sending the chip erase (ce). any address of the sector (see table 3) is a valid address for chip erase (ce) instruction. the cs# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not ex - ecuted. the sequence of issuing ce instruction is: cs# goes low-> sending ce instruction code-> cs# goes high. (see fig - ure 20) the self-timed chip erase cycle time (tce) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the chip erase cycle is in progress. the wip sets 1 during the tce timing, and sets 0 when chip erase cycle is completed, and the write enable latch (wel) bit is reset. if the chip is protected by bp0~bp4 bits, the chip erase (ce) instruction will not be executed. it will be only executed when bp0~bp4 all set to "0". please use special unprotection method to set bp0~bp4 to 0, see the flow chart 2. (11) page program (pp) the page program (pp) instruction is for programming the memory to be "0". a write enable (wren) instruction must execute to set the write enable latch (wel) bit before sending the page program (pp). if the eight least sig - nifcant address bits (a7-a0) are not all 0, all transmitted data which goes beyond the end of the current page are programmed from the start address if the same page (from the address whose 8 least signifcant address bits (a7- a0) are all 0). the cs# must keep during the whole page program cycle. the cs# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. if more than 256 bytes are sent to the device, the data of the last 256-byte is programmed at the request page and previous data will be disregarded. if less than 256 bytes are sent to the device, the data is programmed at the request address of the page without effect on other address of the same page. the sequence of issuing pp instruction is: cs# goes low-> sending pp instruction code-> 3-byte address on si-> at
17 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C (12) deep power-down (dp) the deep power-down (dp) instruction is for setting the device on the minimizing the power consumption (to enter - ing the deep power-down mode), the standby current is reduced from isb1 to isb2). the deep power-down mode requires the deep power-down (dp) instruction to enter, during the deep power-down mode, the device is not ac - tive and all write/program/erase instruction are ignored. when cs# goes high, it's only in standby mode not deep power-down mode. it's different from standby mode. the sequence of issuing dp instruction is: cs# goes low-> sending dp instruction code-> cs# goes high. (see fig - ure 22) once the dp instruction is set, all instruction will be ignored except the release from deep power-down mode (rdp) and read electronic signature (res) instruction. (res instruction to allow the id been read out). when power- down, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. for rdp instruction the cs# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. as soon as chip select (cs#) goes high, a delay of tdp is required before entering the deep power-down mode and reducing the current to isb2. (13) release from deep power-down (rdp), read electronic signature (res) the release from deep power-down (rdp) instruction is terminated by driving chip select (cs#) high. when chip select (cs#) is driven high, the device is put in the stand-by power mode. if the device was not previously in the deep power-down mode, the transition to the stand-by power mode is immediate. if the device was previously in the deep power-down mode, though, the transition to the stand-by power mode is delayed by tres2, and chip select (cs#) must remain high for at least tres2(max), as specifed in table 6. once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions. res instruction is for reading out the old style of 8-bit electronic signature, whose values are shown as table of id defnitions. this is not the same as rdid instruction. it is not recommended to use for new design. for new deisng, please use rdid instruction. even in deep power-down mode, the rdp and res are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/ write cycle in progress. the sequence is shown as figure 23,24. the res instruction is ended by cs# goes high after the id been read out at least once. the id outputs repeat - edly if continuously send the additional clock cycles on sclk while cs# is at low. if the device was not previously in deep power-down mode, the device transition to standby mode is immediate. if the device was previously in deep power-down mode, there's a delay of tres2 to transit to standby mode, and cs# must remain to high at least tres2(max). once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. least 1-byte on data on si-> cs# goes high. (see figure 18) the self-timed page program cycle time (tpp) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the page program cycle is in progress. the wip sets 1 during the tpp timing, and sets 0 when page program cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp1, bp0 bits, the page program (pp) instruction will not be executed. if the proccess range covers or crosses address 000000h to address 039fffh area, please use special unprotec - tion method to unprotect the protected bits bp0~bp4. see the flowchart 2.
18 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C the rdp instruction is for releasing from deep power down mode. (14) read electronic manufacturer id & device id (rems) the rems instruction is an alternative to the release from power-down/device id instruction that provides both the jedec assigned manufacturer id and the specifc device id. the rems instruction is very similar to the release from power-down/device id instruction. the instruction is initi - ated by driving the cs# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes address (a7~a0). after which, the manufacturer id for mxic (c2h) and the device id are shifted out on the falling edge of sclk with most signifcant bit (msb) frst as shown in fgure 25. the device id values are listed in table of id defnitions on page 16. if the one-byte address is initially set to 01h, then the device id will be read frst and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving cs# high. table of id defnitions: rdid command manufacturer id memory type memory density c2 20 12 res command electronic id 03 rems command manufacturer id device id c2 03
19 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C power-on state the device is at below states when power-up: - standby mode ( please note it is not deep power-down mode) - write enable latch (wel) bit is reset the device must not be selected during power-up and power-down stage unless the vcc achieves below correct level: - vcc minimum at power-up stage and then after a delay of tvsl - gnd at power-down please note that a pull-up resistor on cs# may ensure a safe and proper power-up/down level. an internal power-on reset (por) circuit may protect the device from data corruption and inadvertent data change during power up state. for further protection on the device, if the vcc does not reach the vcc minimum level, the correct operation is not guaranteed. the read, write, erase, and program command should be sent after the below time delay: - tvsl after vcc reached vcc minimum level the device can accept read command after vcc reached vcc minimum and a time delay of tvsl. please refer to the fgure of "power-up timing". note: - to stabilize the vcc level, the vcc rail decoupled by a suitable capacitor close to package pins is recommend - ed.(generally around 0.1uf)
20 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C notice: 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is stress rating only and functional operational sections of this specifcation is not implied. exposure to absolute maximum rating conditions for extended period may affect reliability. 2. specifcations contained within the following tables are subject to change. 3. during voltage transitions, all pins may overshoot to 4.6v or -0.5v for period up to 20ns. 4. all input and output pins may overshoot to vcc+0.5v while vcc+0.5v is smaller than or equal to 4.6v. absolute maximum ratings electrical specifications capacitance ta = 25 c, f = 1.0 mhz figure 3.maximum negative overshoot waveform figure 4. maximum positive overshoot waveform symbol parameter min. typ max. unit conditions cin input capacitance 6 pf vin = 0v cout output capacitance 8 pf vout = 0v rating value ambient operating temperature industrial grade -40 c to 85 c storage temperature -55 c to 125 c applied input voltage -0.5v to 4.6v applied output voltage -0.5v to 4.6v vcc to ground potential -0.5v to 4.6v 0v -0.5v 20ns 4.6v 3.6v 20ns
21 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 5. input test waveforms and measurement level figure 6. output loading a c measurement le v el input timing ref er ance le v el output timing ref er ance le v el 0.8vcc 0.7vcc 0.3vcc 0.5vcc 0.2vcc note: input pulse r ise and f all time are <5ns device under test diodes=in3064 or eq uiv alent cl 6.2k ohm 2.7k ohm +3.3v cl=30pf including jig capacitance (cl=15pf including jig capacitance for 70mhz & 85mhz)
22 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C table 5. dc characteristics (temperature = -40 c to 85 c for industrial grade, vcc = 2.7v ~ 3.6v) notes : 1. typical values at vcc = 3.3v, t = 25 c. these currents are valid for all product versions (package and speeds). 2. typical value is calculated by simulation. 3. not 100% tested. symbol parameter notes min. typ. max. units test conditions ili input load current 1 2 ua vcc = vcc max, vin = vcc or gnd ilo output leakage current 1 2 ua vcc = vcc max, vin = vcc or gnd isb1 vcc standby current 1 10 ua vin = vcc or gnd, cs# = vcc isb2 deep power-down current 10 ua vin = vcc or gnd, cs# = vcc icc1 vcc read 1 12 ma f=85mhz & 70mhz, sclk=0.1vcc/0.9vcc, so=open 8 ma f=66mhz, sclk=0.1vcc/0.9vcc, so=open 4 ma f=33mhz, sclk=0.1vcc/0.9vcc, so=open icc2 vcc program current (pp) 1 15 ma program in progress, cs# = vcc icc3 vcc write status register (wrsr) current 15 ma program status register in progress, cs#=vcc icc4 vcc sector erase current (se) 1 15 ma erase in progress, cs#=vcc icc5 vcc chip erase current (ce) 1 15 ma erase in progress, cs#=vcc vil input low voltage -0.5 0.3vcc v vih input high voltage 0.7vcc vcc+0.4 v vol output low voltage 0.4 v iol = 1.6ma voh output high voltage vcc-0.2 v ioh = -100ua vwi low vcc write inhibit voltage 3 2.1 2.3 2.5 v
23 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C table 6. ac characteristics (temperature = -40 c to 85 c for industrial grade, vcc = 2.7v ~ 3.6v) note: 1. tch + tcl must be greater than or equal to 1/ fc 2. value guaranteed by characterization, not 100% tested in production. 3. expressed as a slew-rate. 4. only applicable as a constraint for a wrsr instruction when srwd is set at 1. 5. test condition is shown as figure 3. symbol alt. parameter min. typ. max. unit fsclk fc clock frequency for the following instructions: fast_read, pp, se, be, ce, dp, res,rdp, wren, wrdi, rdid, rdsr, wrsr d.c. 85 mhz frsclk fr clock frequency for read instructions d.c. 33 mhz tch(1) tclh clock high time @33mhz 15 ns @85mhz 5.5 ns tcl(1) tcll clock low time @33mhz 15 ns @85mhz 5.5 ns tclch(2) clock rise time (3) (peak to peak) 0.1 v/ns tchcl(2) clock fall time (3) (peak to peak) 0.1 v/ns tslch tcss cs# active setup time (relative to sclk) 5 ns tchsl cs# not active hold time (relative to sclk) 5 ns tdvch tdsu data in setup time 2 ns tchdx tdh data in hold time 5 ns tchsh cs# active hold time (relative to sclk) 5 ns tshch cs# not active setup time (relative to sclk) 5 ns tshsl tcsh cs# deselect time 100 ns tshqz(2) tdis output disable time 6 ns tclqv tv clock low to output valid 30pf 8 ns 15pf 6 ns tclqx tho output hold time 0 ns thlch hold# setup time (relative to sclk) 5 ns tchhh hold# hold time (relative to sclk) 5 ns thhch hold setup time (relative to sclk) 5 ns tchhl hold hold time (relative to sclk) 5 ns thhqx(2) tlz hold to output low-z 6 ns thlqz(2) thz hold# to output high-z 6 ns twhsl(4) write protect setup time 20 ns tshwl(4) write protect hold time 100 ns tdp(2) cs# high to deep power-down mode 3 us tres1(2) cs# high to standby mode without electronic signature read 3 us tres2(2) cs# high to standby mode with electronic signature read 1.8 us tw write status register cycle time 5 15 ms tpp page program cycle time 1.4 5 ms tse sector erase cycle time 60 ms tbe block erase cycle time 1 2 s tce chip erase cycle time 1.8 3.8 s
24 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C initial delivery state the device is delivered with the memory array erased: all bits are set to 1 (each byte contains ffh). the status register contains 00h (all status register bits are 0). note: 1. the parameter is characterized only. table 7. power-up timing symbol parameter min. max. unit tvsl(1) vcc(min) to cs# low 10 us
25 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 7. serial input timing figure 8. output timing sclk si cs# msb so tdvch high-z lsb tslch tchdx tchcl tclch tshch tshsl tchsh tchsl lsb addr.lsb in tshqz tch tcl tqlqh tqhql tclqx tclqv tclqv sclk so cs# si
26 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 9. hold timing * si is "don't care" during hold operation. figure 10. wp# disable setup and hold timing during wrsr when srwd=1 tchhl thlch thhch tchhh thhqx thlqz sclk so cs# hold# high-z 01 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 twhsl tshwl sclk si cs# wp# so
27 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 11. write enable (wren) sequence (command 06) figure 12. write disable (wrdi) sequence (command 04) figure 13. read identifcation (rdid) sequence (command 9f) 2 1 34567 high-z 0 06 command sclk si cs# so 2 1 34567 high-z 0 04 command sclk si cs# so 2 1 3456789 10 11 12 13 14 15 command 0 manufacturer identification high-z msb 15 14 13 3210 device identification msb 7 6 5 3 2 1 0 16 17 18 28 29 30 31 sclk si cs# so 9f
28 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 14. read status register (rdsr) sequence (command 05) figure 15. write status register (wrsr) sequence (command 01) figure 16. read data bytes (read) sequence (command 03) 2 1 3456789 10 11 12 13 14 15 command 0 7 6543210 status register out high-z msb 7 6543210 status register out msb 7 sclk si cs# so 05 2 1 3456789 10 11 12 13 14 15 status register in 0 765432 0 1 msb sclk si cs# so 01 high-z command sclk si cs# so 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 76543 1 7 0 data out 1 24-bit address 0 msb msb 2 39 data out 2 03 high-z command
29 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 17. read at higher speed (fast_read) sequence (command 0b) 23 2 1 3456789 10 28 29 30 31 22 21 3210 high-z 24 bit address 0 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 data out 1 dummy byte msb 7 6543210 data out 2 msb msb 7 47 765432 0 1 35 sclk si cs# so sclk si cs# so 0b command
30 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 18. page program (pp) sequence (command 02) 42 41 43 44 45 46 47 48 49 50 52 53 54 55 40 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 24-bit address 0 765432 0 1 data byte 1 39 51 765432 0 1 data byte 2 765432 0 1 data byte 3 data byte 256 2079 2078 2077 2076 2075 2074 2073 765432 0 1 2072 msb msb msb msb msb sclk cs# si sclk cs# si 02 command
31 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 19. sector erase (se) sequence (command 20) note: se command is 20(hex). figure 20. block erase (be) sequence (command 52 or d8) note: be command is 52 or d8(hex). 24 bit address 2 1 3456789 29 30 31 0 7 6 2 1 0 msb sclk cs# si 20 command 24 bit address 2 1 3456789 29 30 31 0 23 22 2 0 1 msb sclk cs# si 52 or d8 command
32 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 21. chip erase (ce) sequence (command 60 or c7) figure 22. deep power-down (dp) sequence (command b9) figure 23. release from deep power-down and read electronic signature (res) sequence (com - mand ab) note: ce command is 60(hex) or c7(hex). 2 1 34567 0 60 or c7 sclk si cs# command 2 1 34567 0 t dp deep power-down mode stand-by mode sclk cs# si b9 command 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 765432 0 1 high-z electronic signature out 3 dummy bytes 0 msb stand-by mode deep power-down mode msb t res2 sclk cs# si so ab command
33 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 24. release from deep power-down (rdp) sequence (command ab) figure 25. read electronic manufacturer & device id (rems) sequence (command 90) notes: (1) add=00h will output the manufacturer's id frst and add=01h will output device id frst 2 1 34567 0 t res1 stand-by mode deep power-down mode high-z sclk cs# si so ab command 15 14 13 3 2 1 0 2 1 3456789 10 2 dummy bytes 0 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 manufacturer id add (1) msb 7 6543210 device id msb msb 7 47 765432 0 1 35 31 30 29 28 sclk si cs# so sclk si cs# so x 90 high-z command
34 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C figure 26. power-up timing v cc v cc (min) chip selection is not allowed tvsl time device is fully accessible v cc (max)
35 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C recommended operating conditions at device power-up ac timing illustrated in figure a is recommended for the supply voltages and the control signals at device power-up. if the timing in the fgure is ignored, the device may not operate correctly. figure a. ac timing at device power-up notes : 1. sampled, not 100% tested. 2. for ac spec tchsl, tslch, tdvch, tchdx, tshsl, tchsh, tshch, tchcl, tclch in the fgure, please refer to "ac characteristics" table. sclk si cs# vcc msb in so tdvch high impedance lsb in tslch tchdx tchcl tclch tshch tshsl tchsh tchsl tvr vcc(min) gnd symbol parameter notes min. max. unit tvr vcc rise time 1 0.5 500000 us/v
36 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C erase and programming performance note: 1. typical program and erase time assumes the following conditions: 25c, 3.3v, and checker board pattern. 2. under worst conditions of 85c and 2.7v. 3. system-level overhead is the time required to execute the frst-bus-cycle sequence for the programming com - mand. latch-up characteristics min. max. input voltage with respect to gnd on acc -1.0v 12.5v input voltage with respect to gnd on all power pins, si, cs# -1.0v 2 vccmax input voltage with respect to gnd on so -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 3.0v, one pin at a time. parameter min. typ. (1) max. (2) unit write status register cycle time 5 15 ms sector erase time 60 ms block erase time 1 2 s chip erase time 1.8 3.8 s page program time 1.4 5 ms erase/program cycle 100,000 cycles
37 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C ordering information part no. clock (mhz) operating current max. (ma) standby current max. (ua) temperature package remark MX25L2026Cmi-12g 85 12 10 -40~85c 8-sop (150mil) pb-free
38 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C part name description mx 25 l 12 m i g option: g: pb-free speed: 12: 85mhz tempera ture range: i: industrial (-40c to 85c) p a cka ge: m: 150mil 8-sop density & mode: 2026c: 2mb type: l: 3v device: 25: ser ial flash 2026c
39 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C package information
40 p/n: pm1476 rev. 1.1, jul. 21, 2009 MX25L2026C revision history revision no. description page date 1.0 1. removed "preliminary" title p1 may/14/2009 2. added "low vcc write inhibit" voltage (vwi) parameter p22 1.1 1. removed the loading description of fsclk p23 jul/21/2009 2. removed sector erase maximum timing p1,23,36
MX25L2026C m acronix i nternational c o., l td. macronix offces : taiwan headquarters, fab2 macronix, international co., ltd. 16, li-hsin road, science park, hsinchu, taiwan, r.o.c. tel: +886-3-5786688 fax: +886-3-5632888 taipei offce macronix, international co., ltd. 19f, 4, min-chuan e. road, sec. 3, taipei, taiwan, r.o.c. tel: +886-2-2509-3300 fax: +886-2-2509-2200 macronix offces : china macronix (hong kong) co., limited. 702-703, 7/f, building 9, hong kong science park, 5 science park west avenue, sha tin, n.t. tel: +86-852-2607-4289 fax: +86-852-2607-4229 macronix (hong kong) co., limited, suzhou offce no.5, xinghai rd, suzhou industrial park, suzhou china 215021 tel: +86-512-62580888 ext: 3300 fax: +86-512-62586799 macronix (hong kong) co., limited, shenzhen offce room 1401 & 1404, block a, tianan hi-tech plaza tower, che gong miao, futiandistrict, shenzhen prc 518040 tel: +86-755-83433579 fax: +86-755-83438078 http : //www.macronix.com macronix international co., ltd. reserves the right to change product and specifcations without notice. macronix offces : japan macronix asia limited. nkf bldg. 5f, 1-2 higashida-cho, kawasaki-ku kawasaki-shi, kanagawa pref. 210-0005, japan tel: +81-44-246-9100 fax: +81-44-246-9105 macronix offces : korea macronix asia limited. #906, 9f, kangnam bldg., 1321-4, seocho-dong, seocho-ku, 135-070, seoul, korea tel: +82-02-588-6887 fax: +82-02-588-6828 macronix offces : singapore macronix pte. ltd. 1 marine parade central, #11-03 parkway centre, singapore 449408 tel: +65-6346-5505 fax: +65-6348-8096 macronix offces : europe macronix europe n.v. koningin astridlaan 59, bus 1 1780 wemmel belgium tel: +32-2-456-8020 fax: +32-2-456-8021 macronix offces : usa macronix america, inc. 680 north mccarthy blvd. milpitas, ca 95035, u.s.a. tel: +1-408-262-8887 fax: +1-408-262-8810 macronix's products are not designed, manufactured, or intended for use for any high risk applications in which the failure of a single component could cause death, personal injury, severe physical damage, or other substan - tial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft and military application. macronix and its suppliers will not be liable to you and/or any third party for any claims, injuries or damages that may be incurred due to use of macronix's products in the prohibited applications. copyright? macronix international co., ltd. 2009. all rights reserved. macronix, mxic, mxic logo, mx logo, are trademarks or registered trademarks of macronix international co., ltd.. the names and brands of other companies are for identifcation purposes only and may be claimed as the property of the respective companies.

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